Advanced Technical Information
MWI 60-06 G6K
IGBT Module
I C25
= 60 A
Sixpack
Square RBSOA
10, 23
V CES = 600 V
V CE(sat) typ. = 2.3 V
8
14
18
22
NTC
13
17
21
11, 12
15, 16
19, 20
7
6
5
4
3
2
1
9, 24
IGBTs
Features
? IGBTs
Symbol
Conditions
Maximum Ratings
- low saturation voltage
V CES
V GES
I C25
I C80
I CM
V CEK
P tot
T VJ = 25°C to 150°C
T C = 25°C
T C = 80°C
V GE = ± 15 V; R G = 10 ? ; T VJ = 125°C
RBSOA; clamped inductive load; L = 100 μH
T C = 25°C
600
± 20
60
41
80
V CES
180
V
V
A
A
A
W
- fast switching
- short tail current for optimized
performance also in resonant
circuits
? HiPerFRED TM diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
? Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
? UL registered E72873
Symbol
Conditions
Characteristic Values
(T VJ = 25 ° C, unless otherwise specified)
min. typ. max.
Typical Applications
? AC drives
V CE(sat)
V GE(th)
I CES
I GES
t d(on)
t r
t d(off)
t f
E on
E off
C ies
Q Gon
I C = 30 A; V GE = 15 V; T VJ = 25°C
T VJ = 125°C
I C = 0.25 mA; V GE = V CE
V CE = V CES ; V GE = 0 V; T VJ = 25°C
T VJ = 125°C
V CE = 0 V; V GE = ± 20 V
Inductive load, T VJ = 125°C
V CE = 400 V; I C = 30 A
V GE = ±15 V; R G = 3 ?
V CE = 25 V; V GE = 0 V; f = 1 MHz
V CE = 300 V; V GE = 15 V; I C = 30 A
3
2.3
2.0
1.2
20
20
130
80
0.6
0.5
2500
95
2.8
5
0.2
100
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
pF
nC
R thJC
R thCH
(per IGBT)
0.25
0.7 K/W
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
? 2005 IXYS All rights reserved
1-2
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